University of Udine
Italy
→
Marco Pala
Work
Università degli Studi di UDINE
|Docenti di ruolo di IIa fascia
Italy
→
Centre National de la Recherche Scientifique
France
→
Centre National de la Recherche Scientifique
France
→
Publications
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations
journal-article
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement
Nature Electronics
journal-article
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement
journal-article
Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition
Physical Review B
journal-article
Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition
journal-article
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride
Physical Review B
journal-article
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride
journal-article
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence
Advanced Optical Materials
journal-article
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence
journal-article
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations
IEEE Transactions on Electron Devices
journal-article
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations
conference-paper
Thermal conductance of twisted-layer graphite nanofibers
Carbon
journal-article
Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer
Nanotechnology
journal-article
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
journal-article
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
ACS Applied Nano Materials
journal-article
Direct observation of highly anisotropic electronic and optical nature in indium telluride
journal-article
Direct observation of highly anisotropic electronic and optical nature in indium telluride
Physical Review Materials
journal-article
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
journal-article
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
journal-article
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
Physical Review Research
journal-article
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3
ACS Nano
journal-article
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
journal-article
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
Journal of Computational Electronics
journal-article
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials
conference-paper
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations
conference-paper
Tunnel Field‐Effect Transistors Based on III–V Semiconductors
book-chapter
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure
journal-article
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
conference-paper
Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition
journal-article
Thermal conductance of twisted-layer graphite nanofibers
journal-article
α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene
journal-article
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
journal-article
α − As 2 Te 3 as a platform for the exploration of the electronic band structure of single layer β − tellurene
Physical Review B
journal-article
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
Solid-State Electronics
journal-article
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
journal-article
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
Solid-State Electronics
journal-article
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
journal-article
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
Solid-State Electronics
journal-article
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
journal-article
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
Nanoscale
journal-article
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter
IEEE Transactions on Electron Devices
journal-article
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter
journal-article
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy
journal-article
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes
Journal of Physics D: Applied Physics
journal-article
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes
journal-article
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
IEEE Journal of the Electron Devices Society
journal-article
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
journal-article
Phonon-assisted transport in van der Waals heterostructure tunnel devices
Solid-State Electronics
journal-article
Phonon-assisted transport in van der Waals heterostructure tunnel devices
journal-article
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer
journal-article
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
conference-paper
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
conference-paper
Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes
Solid-State Electronics
journal-article
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes
journal-article
α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene
Physical Review B
journal-article
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
Nanomaterials
journal-article
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
journal-article
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability
conference-paper
Electronic band gap of van der Waals α-As2Te3 crystals
Applied Physics Letters
journal-article
Electronic band gap of van der Waals α-As 2 Te 3 crystals
journal-article
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability
conference-paper
Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability
conference-paper
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
npj 2D Materials and Applications
journal-article
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
journal-article
Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics
conference-paper
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
npj 2D Materials and Applications
journal-article
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
journal-article
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer
Nanomaterials
journal-article
Quenching Statistics of Silicon Single Photon Avalanche Diodes
journal-article
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations
conference-paper
Quenching Statistics of Silicon Single Photon Avalanche Diodes
IEEE Journal of the Electron Devices Society
journal-article
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations
conference-paper
Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials
IEEE Transactions on Electron Devices
journal-article
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism
conference-paper
Full Band Monte Carlo simulation of phonon transfer at interfaces
conference-paper
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials
journal-article
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
Physical Review Research
journal-article
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
journal-article
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism
conference-paper
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Full band monte carlo simulation of phonon transfer at interfaces
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Full Band Monte Carlo simulation of phonon transfer at interfaces
conference-paper
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes
conference-paper
Verilog-A model for avalanche dynamics and quenching in single-photon avalanche diodes
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes
conference-paper
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application
Physical Review B
journal-article
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application
Physical Review B
journal-article
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application
journal-article
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
journal-article
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices
conference-paper
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
IEEE Electron Device Letters
journal-article
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
journal-article
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
Journal of Applied Physics
journal-article
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
Journal of Applied Physics
journal-article
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices
journal-article
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors
conference-paper
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions
Nanotechnology
journal-article
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
Journal of Physics D: Applied Physics
journal-article
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors
conference-paper
High performance WTe2 -MoS2 in-plane heterojunction tunnel field effect transistors
European Solid-State Device Research Conference
conference-paper
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
IEEE Transactions on Electron Devices
journal-article
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
IEEE Transactions on Electron Devices
journal-article
Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study
journal-article
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
IEEE Transactions on Electron Devices
journal-article
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
IEEE Transactions on Electron Devices
journal-article
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs
journal-article
Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
Composants nanoélectroniques
journal-article
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications
journal-article
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications
Physical Review B
journal-article
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings
book-chapter
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings
NanoScience and Technology
book
On the origins of transport inefficiencies in mesoscopic networks
journal-article
On the origins of transport inefficiencies in mesoscopic networks
Scientific Reports
journal-article
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits
conference-paper
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
conference-paper
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
conference-paper
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors
journal-article
Local stress engineering for the optimization of p-GaN gate HEMTs power devices
conference-paper
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations
conference-paper
Local stress engineering for the optimization of p-GaN gate HEMTs power devices
conference-paper
Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs
conference-paper
Van der Waals tunnel field effect transistors with lateral momentum mismatch
conference-paper
Van der Waals tunnel field effect transistors with misoriented layers
conference-paper
A review of selected topics in physics based modeling for tunnel field-effect transistors
Semiconductor Science and Technology
journal-article
A review of selected topics in physics based modeling for tunnel field-effect transistors
journal-article
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs
IEEE Transactions on Electron Devices
journal-article
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs
journal-article
Local stress engineering for the optimization of p-GaN gate HEMTs power devices
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Simulation of van der Waals vertical tunnel field-effect transistors
working-paper
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
journal-article
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
Journal of Computational Electronics
journal-article
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
Journal of Computational Electronics
journal-article
VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study
conference-paper
VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
conference-paper
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
journal-article
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
Solid-State Electronics
journal-article
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study
journal-article
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study
IEEE Transactions on Electron Devices
journal-article
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study
Ieee Transactions on Electron Devices
journal-article
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
conference-paper
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
Journal of Computational Electronics
journal-article
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
European Solid-State Device Research Conference
conference-paper
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD
conference-paper
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
Physical Review B
journal-article
A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges
conference-paper
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region
conference-paper
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
conference-paper
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study
European Solid-State Device Research Conference
conference-paper
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study
conference-paper
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
Ieee Transactions on Electron Devices
journal-article
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
IEEE Transactions on Electron Devices
journal-article
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs
journal-article
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs
Ieee Journal of the Electron Devices Society
journal-article
Exploiting hetero-junctions to improve the performance of III-V nanowire tunnel-FETs
IEEE Journal of the Electron Devices Society
journal-article
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs
journal-article
Quantum simulation of tunnel field-effect transistors based on transition metal dichalcogenides
conference-paper
Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs
conference-paper
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study
Journal of Applied Physics
journal-article
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study
Journal of Applied Physics
journal-article
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study
journal-article
Influence of interface traps on the performance of Tunnel FETs
2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings
conference-paper
Influence of interface traps on the performance of Tunnel FETs
conference-paper
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
conference-paper
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
conference-paper
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
conference-paper
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
conference-paper
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
journal-article
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
Physical Review B - Condensed Matter and Materials Physics
journal-article
Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides
conference-paper
Nanowire Devices
book-chapter
(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
conference-paper
Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes
conference-paper
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
conference-paper
Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor
conference-paper
(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
conference-paper
Scanning Probe Electronic Imaging of Lithographically Patterned Quantum Rings
book-chapter
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
book-chapter
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy
book-chapter
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects
Sige, Ge, and Related Compounds 6: Materials, Processing, and Devices
book-chapter
Challenges and opportunities in the design of Tunnel FETs: Materials, device architectures, and defects
ECS Transactions
conference-paper
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects
journal-article
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
Ieee Electron Device Letters
journal-article
Large on-current enhancement in hetero-junction tunnel-FETs via molar fraction grading
IEEE Electron Device Letters
journal-article
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading
journal-article
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs
Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability, and Manufacturing
book-chapter
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs
conference-paper
Nanowire Devices
Beyond CMOS Nanodevices 2
book
Quantum simulation of self-heating effects in rough Si nanowire FETs
2014 International Workshop on Computational Electronics, IWCE 2014
conference-paper
Quantum simulation of self-heating effects in rough Si nanowire FETs
conference-paper
Scanning probe electronic imaging of lithographically patterned quantum rings
NanoScience and Technology
book
Locating an individual quantum hall island inside a quantum ring
AIP Conference Proceedings
conference-paper
Scanning gate spectroscopy of transport across a quantum Hall nano-island
journal-article
Scanning gate spectroscopy of transport across a quantum Hall nano-island
New Journal of Physics
journal-article
Coherent tunnelling across a quantum point contact in the quantum Hall regime
journal-article
Scanning gate spectroscopy of a quantum Hall island near a quantum point contact
conference-paper
Scanning gate spectroscopy of transport across a quantum Hall nano-island
New Journal of Physics
journal-article
Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks
AIP Conference Proceedings
conference-paper
Planning The Electron Traffic In Semiconductor Networks: A Mesoscopic Analog Of The Braess Paradox Encountered In Road Networks
Physics of Semiconductors
book-chapter
NEGF for 3D Device Simulation of Nanometric Inhomogenities
book-chapter
NEGF for 3D Device Simulation of Nanometric Inhomogenities
Nanoscale CMOS: Innovative Materials, Modeling and Characterization
book
Locating an individual quantum hall island inside a quantum ring
conference-paper
Nanowires applications in the More Moore/More-Than-Moore perspectives
conference-paper
Towards self-powered systems: using nanostructures to harvest ambient energy
conference-paper
A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks
conference-paper
Beyond CMOS
Nanoscale CMOS: Innovative Materials, Modeling and Characterization
book
Beyond CMOS
book-chapter
Coherence and Coulomb blockade in ultra-small quantum Hall islands
conference-paper
Coherent tunnelling across a quantum point contact in the quantum Hall regime
Scientific Reports
journal-article
Coherent tunnelling across a quantum point contact in the quantum Hall regime
Scientific Reports
journal-article
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope
conference-paper
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs-Part II: Comparative Analysis and Trap-Induced Variability
Ieee Transactions on Electron Devices
journal-article
Interface traps in InAs nanowire tunnel FETs and MOSFETs - Part II: Comparative analysis and trap-induced variability
IEEE Transactions on Electron Devices
journal-article
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability
journal-article
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETs
Ieee Transactions on Electron Devices
journal-article
Interface traps in inas nanowire tunnel-FETs and MOSFETs - Part I: Model description and single trap analysis in tunnel-FETs
IEEE Transactions on Electron Devices
journal-article
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs
journal-article
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
Solid-State Electronics
journal-article
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
Solid-State Electronics
journal-article
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
Solid-State Electronics
journal-article
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
journal-article
Locating an individual quantum Hall island inside a quantum ring
Physics of Semiconductors
book-chapter
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
journal-article
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
IEEE Transactions on Electron Devices
journal-article
A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks
Nanoscale Research Letters
journal-article
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks
journal-article
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs
Ieee Transactions on Electron Devices
journal-article
Deterministic method to evaluate the threshold voltage variability induced by discrete trap charges in Si-nanowire FETs
IEEE Transactions on Electron Devices
journal-article
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs
journal-article
Surface-roughness-induced variability in nanowire InAs tunnel FETs
IEEE Electron Device Letters
journal-article
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: a full quantum study
2012 Ieee International Electron Devices Meeting (Iedm)
journal-article
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study
Technical Digest - International Electron Devices Meeting, IEDM
conference-paper
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study
conference-paper
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
conference-paper
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
conference-paper
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
Ieee Transactions on Electron Devices
journal-article
Strain-induced performance improvements in InAs nanowire tunnel FETs
IEEE Transactions on Electron Devices
journal-article
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs
Ieee Electron Device Letters
journal-article
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs
journal-article
Theoretical study of thermoelectric properties of SiC nanowires
Materials Science Forum
book
Theoretical Study of Thermoelectric Properties of SiC Nanowires
conference-paper
Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox
Physical Review Letters
journal-article
Transport inefficiency in branched-out mesoscopic networks: An analog of the braess paradox
Physical Review Letters
journal-article
Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox
journal-article
Superconducting proximity effect in interacting quantum dots revealed by shot noise
journal-article
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2011 Ieee International Electron Devices Meeting (Iedm)
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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: Successes and limitations
Semiconductor Science and Technology
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Acta Physica Polonica a
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Scanning-gate microscopy of semiconductor nanostructures: An overview
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Superconducting proximity effect in interacting quantum dots revealed by shot noise
Solid State Communications
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Superconducting proximity effect in interacting quantum dots revealed by shot noise
Solid State Communications
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[Invited] Scanning-gate microscopy of semiconductor nanostructures : an overview
Acta Physica Polonica A
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A Study for Thermoelectric Properties of SiC nanowires
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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview
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Quantum Simulation of Silicon-Nanowire FETs
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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
Ieee Transactions on Electron Devices
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A Study for Thermoelectric Properties of Si nanowires
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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
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Spin-orbit coupling and phase coherence in InAs nanowires
Physical Review B - Condensed Matter and Materials Physics
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Spin-orbit coupling and phase-coherence in InAs nanowires
Physical Review B: Condensed Matter and Materials Physics
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Elastic and inelastic scattering in SiNWs
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Non-equilibrium transport through coupled quantum dot-metallic island systems
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Imaging Coulomb islands in a quantum Hall interferometer
Nature Communications
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Imaging Coulomb islands in a quantum Hall interferometer
Nature Communications
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Imaging Coulomb islands in a quantum Hall interferometer
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Spin-orbit coupling and phase coherence in InAs nanowires
Physical Review B
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Superconducting proximity effect in interacting double-dot systems
Physical Review B
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Superconducting proximity effect in interacting double-dot systems
Physical Review B - Condensed Matter and Materials Physics
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Superconducting proximity effect in interacting double-dot systems
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Superconducting proximity effect in interacting double-dot systems
Physical Review B: Condensed Matter and Materials Physics
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Spin-orbit coupling and phase coherence in InAs nanowires
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Influence of ionized impurities in silicon nanowire MOS transistors
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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs
IEEE Transactions on Electron Devices
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Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes
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Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs
IEEE Transactions on Electron Devices
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Nonlocal Andreev transport through an interacting quantum dot
Physical Review B: Condensed Matter and Materials Physics
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
Microelectronics Journal
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
Microelectronics Journal
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
Microelectronics Journal
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Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs
2009 9th Ieee Conference on Nanotechnology (Ieee-Nano)
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Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
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Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs
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Challenges and prospects of RF oscillators using silicon Resonant Tunneling Diodes
ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
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Challenges and prospects of RF oscillators using silicon resonant tunneling diodes
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
Ieee Electron Device Letters
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Channel-length dependence of low-field mobility in silicon-nanowire FETs
IEEE Electron Device Letters
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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
IEEE Electron Device Letters
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Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs
Ieee Transactions on Electron Devices
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Full quantum treatment of remote Coulomb scattering in silicon nanowire FETs
IEEE Transactions on Electron Devices
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Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs
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Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs
2009 International Conference on Simulation of Semiconductor Processes and Devices
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Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs
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Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
Journal of Computational Electronics
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Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
Journal of Computational Electronics
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Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
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Iwce-13: 2009 13th International Workshop on Computational Electronics
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Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs
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Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs
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Full-3D real-space treatment of surface roughness in double gate MOSFETs
Ulis 2009: 10th International Conference on Ultimate Integration of Silicon
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Full-3D real-space treatment of surface roughness in double gate MOSFETs
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Iwce-13: 2009 13th International Workshop on Computational Electronics
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Influence of ionized impurities in Silicon Nanowire Transistors
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Intrinsic cut off frequency of Si and GaAs based resonant tunneling diodes
Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
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Nonlocal Andreev transport through an interacting quantum dot
Physical Review B
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Nonlocal Andreev transport through an interacting quantum dot
Physical Review B - Condensed Matter and Materials Physics
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Nonlocal Andreev transport through an interacting quantum dot
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physica status solidi (c)
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Performances comparison of Si and GaAs based resonant tunneling diodes
Physica Status Solidi (C) Current Topics in Solid State Physics
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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs
Nanotechnology
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Phonon-and surface-roughness-limited mobility of gate-all-around 3C-SiC and Sinanowire FETs
Nanotechnology
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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs
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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs
Nanotechnology
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Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects
Nanotechnology
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Scanning gate microscopy of quantum rings: Effects of an external magnetic field and of charged defects
Nanotechnology
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Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects
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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs
Ieee Transactions on Electron Devices
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Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs
IEEE Transactions on Electron Devices
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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs
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Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes
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Full-3D real-space treatment of surface roughness in double gate MOSFETs
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Full-3D real-space simulation of surface-roughness effects in double gate MOSFETs
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Journal of Computational Electronics
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Nonequilibrium Josephson and Andreev current through interacting quantum dots (vol 9, 278, 2007)
New Journal of Physics
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Erratum: Nonequilibrium Josephson and Andreev current through interacting quantum dots (New Journal of Physics 9 (278))
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Quantum transport in nanowire metal-oxide-semiconductor transistors: influence of dielectric confinement
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Physical Review B
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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
Physical Review B - Condensed Matter and Materials Physics
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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
Physical Review B: Condensed Matter and Materials Physics
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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads (vol 77, art no 134513, 2008)
Physical Review B
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Scanning-Gate Microscopy images the electronic LDOS inside nanostructures
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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
IEEE Transactions on Electron Devices
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Size dependence of surface-roughness-limited mobility in Silicon nanowire FETs
IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
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Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs
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Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs
IEEE Transactions on Electron Devices
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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
Journal of Computational Electronics
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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
Journal of Computational Electronics
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Local Density of States from Scanning Gate Microscopy
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Local density of states in mesoscopic samples from scanning gate microscopy
Physical Review B
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Local density of states in mesoscopic samples from scanning gate microscopy
Physical Review B - Condensed Matter and Materials Physics
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Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs
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Nonequilibrium Josephson and Andreev current through interacting quantum dots
New Journal of Physics
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Nonequilibrium Josephson and Andreev current through interacting quantum dots
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Photodarkening and photobleaching of an ytterbium-doped silica double-clad LMA fiber
Optics Express
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Imaging electron wave functions inside open quantum rings
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Imaging electron wave functions inside open quantum rings
Physical Review Letters
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Non-Equilibrium Josephson and Andreev Current through Interacting Quantum Dots
New Journal of Physics
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Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
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Suppression of weak antilocalization in Gax In1-x AsInP narrow quantum wires
Physical Review B - Condensed Matter and Materials Physics
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Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires
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Nanotechnology
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Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities
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Three-dimensional simulation of realistic single electron transistors
IEEE Transactions on Nanotechnology
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Rashba spin precession in quantum-Hall edge channels
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Rashba spin precession in quantum-Hall edge channels
Physical Review B - Condensed Matter and Materials Physics
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Three-dimensional simulation of realistic single electron transistors
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Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism
Physical Review B - Condensed Matter and Materials Physics
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Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism (art. no. 235304)
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Universal Rashba spin precession of two-dimensional electrons and holes
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Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304)
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Universal Rashba spin precession of two-dimensional electrons and holes
Europhysics Letters
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Ballistic transport in strained-Si cavities: Experiment and theory
2004 4th IEEE Conference on Nanotechnology
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Effect of dephasing on the current statistics of mesoscopic devices
Physical Review Letters
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Effect of dephasing on the current statistics of mesoscopic devices
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Proceedings of SPIE - The International Society for Optical Engineering
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Modeling the effects of dephasing on mesoscopic noise
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Three-dimensional simulation of single electron transistors
2004 4th IEEE Conference on Nanotechnology
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Three-dimensional simulation of single electron transistors
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Two-dimensional hole precession in an all-semiconductor spin field effect transistor
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Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices
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Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices
Journal of Computational Electronics
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Decoherence, wave function collapses and non-ordinary statistical mechanics
Chaos, Solitons and Fractals
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Decoherence, wave function collapses and non-ordinary statistical mechanics
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Extraction of parameters of surface states from experimental test structures
Nanotechnology
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A three-dimensional solver of the Schrödinger equation in momentum space for the detailed simulation of nanostructures
Nanotechnology
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A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures
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Extraction of parameters of surface states from experimental test structures
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Quantum measurement and entropy production
Physics Letters, Section A: General, Atomic and Solid State Physics
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Quantum measurement and entropy production
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Proceedings of the IEEE Conference on Nanotechnology
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Towards the thermodynamics of localization processes
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